2SD667A 1a , 120v npn plastic encapsulated transistor elektronische bauelemente 7-oct-2011 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 3 b ase 1 emitter collector 2 rohs compliant product a suffix of -c specifies halogen & lead-free features low frequency power amplifier complementary pair with 2sb647a classification of h fe (1) product-rank 2SD667A-b 2SD667A-c 2SD667A-d range 60~120 100~200 160~320 absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 120 v collector to emitter voltage v ceo 100 v emitter to base voltage v ebo 5 v collector current - continuous i c 1 a collector power dissipation p c 0.9 w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector to base breakdown voltage v (br)cbo 120 - - v i c =10 a, i e =0 collector to emitter breakdown voltage v (br)ceo 100 - - v i c =1ma, i b =0 emitter to base breakdown voltage v (br)ebo 5 - - v i e =10 a, i c =0 collector cut-off current i cbo - - 10 a v cb =100v, i e =0 emitter cut-off current i ebo - - 10 a v eb =4v, i c =0 dc current gain h fe (1) 60 - 320 v ce =5v, i c =150ma h fe (2) 30 - - v ce =5v, i c =500ma collector to emitter saturation voltage v ce(sat) - - 1 v i c =500ma, i b =50ma base to emitter voltage v be - - 1.5 v v ce =5v, i c =150ma transition frequency f t - 140 - mhz v ce =5v, i c =150ma collector output capacitance c ob - 12 - pf v cb =10v, i e =0, f=1mhz to-92mod 1 11 1 emitter 2 22 2 collector 3 33 3 base ref. millimeter ref. millimeter min. max. min. max. a 5.50 6.50 h 1. 70 2.05 b 8.00 9.00 j 2.70 3.20 c 12.70 14.50 k 0.85 1.15 d 4.50 5.30 l 1.60 max e 0.35 0.65 m 0.00 0.40 f 0.30 0.51 n 4.00 min g 1.50 typ. a c e k f d b g h j l m n
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